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Micron
Boise, ID - Main Site
Source: Micron careers · View original posting
From Micron's posting. “We” and “our” refer to the employer.
Our vision is to transform how the world uses information to enrich life for all .
Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever.
Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence. The 3D DRAM Technology Development organization is responsible for advancing next-generation memory technologies that enable future computing innovations. Engineers within this team work in a brand new 300mm R&D facility, collaborating across process development, characterization, reliability, design, and simulation fields to drive memory scaling and manufacturability.
As a 3D DRAM Process Integration Engineer Intern, you will support the development of next-generation DRAM technologies with a focus on device performance, reliability, and manufacturability. This role involves working on advanced memory structures, including charge storage devices and thin-film transistors, while partnering with multi-functional engineering teams to solve challenging integration and circuit-related issues.
The ideal candidate will have a strong foundation in semiconductor device fabrication, materials science, and device physics, combined with data-driven problem-solving skills and a passion for technology innovation.
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